Samsung Low-Power 40nm 4-Gigabit DDR3-Green Gb

Samsung Low-Power 40nm 4-Gigabit DDR3. Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first low-power (green) four gigabit (Gb) DDR3 devices using 40 nanometer (nm) class process technology. The high-density memory is expected to bring significant power savings to data centers, server systems and high-end notebooks.

Samsung Low-Power 40nm 4-Gigabit DDR3

Power consumption varies depending on the component featured. A module based on 60nm-class 1Gb DDR2 components consumes 210W, while a 40nm-class 2Gb DDR3-based module consumes 55W, representing an approximate 75 percent savings. However, the new 40nm-class 4Gb DDR3-based module consumes a mere 36W, which represents about 83 percent savings over the 60nm-class 1Gb DDR2 module. With growing concern about energy costs in data centers, these memory power savings translate into an overall reduction in server power of 10 percent per system.